Band Bending and Valence Band Quantization at Line Defects in MoS2

Valence-Band Ordering in ZnO

Atomic-Monolayer MoS2 Band-to-Band Tunneling Field-Effect Transistor.

The experimental observation of band-to-band tunneling in novel tunneling field-effect transistors utilizing a monolayer of MoS2 as the conducting channel is demonstrated. Our results indicate that the strong gate-coupling efficiency enabled by two-dimensional materials, such as monolayer MoS2 , results in the direct manifestation of a band-to-band tunneling current and an ambipolar transport.

Erratum: Inter-Layer Coupling Induced Valence Band Edge Shift in Mono- to Few-Layer MoS2

Recent progress in the synthesis of monolayer MoS2, a two-dimensional direct band-gap semiconductor, is paving new pathways toward atomically thin electronics. Despite the large amount of literature, fundamental gaps remain in understanding electronic properties at the nanoscale. Here, we report a study of highly crystalline islands of MoS2 grown via a refined chemical vapor deposition synthesi...

Determination of band offsets at GaN/single-layer MoS2 heterojunction

Inter-Layer Coupling Induced Valence Band Edge Shift in Mono- to Few-Layer MoS2

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